Selective ALD of metal-oxides using polymeric blocking layers

We are investigating a methodology to achieve area selective ALD (AS-ALD) by using inductively couple plasma (ICP) grown C₄F₈polymer film as hydrophobic inhibition layer for selective deposition of metal oxides. The robust albeit rather simple and straightforward technique overcomes various challenges associated with previous methods of AS-ALD and provides an alternative route towards nano-patterning using AS-ALD.  AS-ALD of TiO₂ demonstrated in our group offers a novel approach to fabricate close packed nanopatterns for various device architectures without any complex etching or liftoff processes.